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HGT1S20N36G3VLS - Voltage Clamping IGBTs

Download the HGT1S20N36G3VLS datasheet PDF. This datasheet also covers the HGTP20N36G3VL variant, as both devices belong to the same voltage clamping igbts family and are provided as variant models within a single manufacturer datasheet.

Description

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits.

Features

  • Logic Level Gate Drive.
  • Internal Voltage Clamp.
  • ESD Gate Protection.
  • TJ = 175oC.
  • Ignition Energy Capable.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HGTP20N36G3VL-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (onsemi)

Part Number Description
HGT1S20N36G3VL Voltage Clamping IGBTs
HGT1S20N35G3VL N-Channel IGBT
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HGT1S20N60B3S N-Channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
March 2004 HGTP20N36G3VL,HGT1S20N36G3VLS, HGT1S20N36G3VL 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs Features • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175oC • Ignition Energy Capable Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.
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