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G60N100BNTD Datasheet, Fairchild Semiconductor

G60N100BNTD igbt equivalent, npt igbt.

G60N100BNTD Avg. rating / M : 1.0 rating-120

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G60N100BNTD Datasheet

Features and benefits


* High Speed Switching
* Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
* High Input Impedance
* Built-in Fast Recovery Diode Applications
* UPS.

Application


* UPS, Welder March 2014 General Description Using Fairchild's proprietary trench design and advanced NPT technolog.

Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for h.

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TAGS

G60N100BNTD
NPT
IGBT
G60N100
G60N100CE
G60N10
Fairchild Semiconductor

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