G60N100BNTD Datasheet (PDF) Download
Fairchild Semiconductor
G60N100BNTD

Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Key Features

  • High Speed Switching
  • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
  • High Input Impedance
  • Built-in Fast Recovery Diode

Applications

  • UPS, Welder