G40N60C3
features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49273.
Features
- 75A, 600V, TC = 25o C
- 600V Switching SOA Capability
- Typical Fall Time
- -
- . 100ns at TJ = 150o C
- Short Circuit Rating
- Low Conduction Loss
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER HGTG40N60C3 PACKAGE TO-247 PKG. NO. G40N60C3
NOTE: When ordering, use the entire part number.
Symbol
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FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073...
