Datasheet4U Logo Datasheet4U.com

G40N120CE TSG40N120CE

G40N120CE Description

TO-264 Pin Definition: 1.Gate 2.Collector 3.Emitter TSG40N120CE N-Channel IGBT with FRD.PRODUCT SUMMARY VCES (V) VGES (V) 1200 ±20 IC (A) .
The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances,.

G40N120CE Features

* Block Diagram
* 1200V NPT Trench Technology
* High Speed Switching
* Low Conduction Loss Ordering Information Part No. TSG40N120CE C0 Package TO-264 Packing 25pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Collector-Emitter

G40N120CE Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 9/10 Version: B12 TSG40N120CE N-Channel IGBT with FRD. 10/10 Version: B12

📥 Download Datasheet

Preview of G40N120CE PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • G40N150D - FGL40N150D (Fairchild)
  • G40N03A - N-Channel Enhancement Mode Power MOSFET (GFD)
  • G40N60 - Ultrafast IGBT (Fairchild Semiconductor)
  • G40N60A4 - HGTG40N60A4 (Fairchild Semiconductor)
  • G40N60C3 - HGTG40N60C3 (Fairchild Semiconductor)
  • G40N60UFD - FGA40N60UFD (Fairchild Semiconductor)
  • G40 - Voltage-Controlled Attenuator Module (MACOM)
  • G4000EC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)

📌 All Tags

TSG40N120CE Taiwan Semiconductor
Taiwan Semiconductor G40N120CE-like datasheet