Datasheet Details
| Part number | FQPF6N70 |
|---|---|
| Manufacturer | Fairchild (onsemi) |
| File Size | 560.32 KB |
| Description | 700V N-Channel MOSFET |
| Datasheet |
 FQPF6N70 Datasheet
|
|
|
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 3.5A, 700V, RDS(on) = 1.5 Ω @ VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Curre.