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FQPF11N40C - 400V N-Channel MOSFET

Download the FQPF11N40C datasheet PDF. This datasheet also covers the FQP11N40C variant, as both devices belong to the same 400v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 10.5 A, 400 V, RDS(on) = 530 mΩ (Max. ) @ VGS = 10 V, ID = 5.25 A.
  • Low Gate Charge (Typ. 28 nC).
  • Low Crss (Typ. 85 pF).
  • 100% Avalanche Tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQP11N40C_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (onsemi)

Part Number Description
FQPF11N40 400V N-Channel MOSFET
FQPF11N50CF 500V N-Channel MOSFET
FQPF11P06 60V P-Channel MOSFET
FQPF10N20 200V N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET FQP11N40C / FQPF11N40C N-Channel QFET® MOSFET 400 V, 10.5 A, 530 mΩ November 2013 Features • 10.5 A, 400 V, RDS(on) = 530 mΩ (Max.) @ VGS = 10 V, ID = 5.25 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 85 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
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