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FQA9N90C - 900V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 9A, 900V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
  • ◀ ▲.
  • G! TO-3P G DS FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain.

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Datasheet Details

Part number FQA9N90C
Manufacturer Fairchild Semiconductor
File Size 680.52 KB
Description 900V N-Channel MOSFET
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FQA9N90C QFET FQA9N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. TM Features • • • • • • 9A, 900V, RDS(on) = 1.
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