Datasheet Details
| Part number | FQA90N08 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 2.30 MB |
| Description | 80V N-Channel MOSFET |
| Datasheet |
 FQA90N08 Datasheet
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General Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Key Features
- 90 A, 80 V, RDS(on) = 16 mΩ (Max) @VGS = 10 V, ID = 45 A.
- Low Gate Charge (Typ. 84 nC).
- Low Crss (Typ. 200 pF).
- 100% Avalanche Tested.
- 175°C Maximum Junction Temperature Rating D G D S TO-3PN G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Ga.
