Datasheet Details
| Part number | FQA9P25 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 576.31 KB |
| Description | 250V P-Channel MOSFET |
| Datasheet |
 FQA9P25 Datasheet
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General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- -10.5A, -250V, RDS(on) = 0.62Ω @VGS = -10 V Low gate charge ( typical 29 nC) Low Crss ( typical 27 pF) Fast switching 100% avalanche tested Improved dv/dt capability S !.
- G! ▶ ▲.
- G DS TO-3P FQA Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C.