FQA8N80 Fairchild Semiconductor 800V N-Channel MOSFET

Fairchild Semiconductor
Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode ...

• 8.4A, 800V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
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● G! G DS TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter...

Datasheet PDF File FQA8N80 Datasheet 693.76KB

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