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FQA8N80C_F109 - MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V.
  • Low gate charge ( typical 35 nC).
  • Low Crss ( typical 13pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant November 2007 QFET ®.

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Full PDF Text Transcription for FQA8N80C_F109 (Reference)

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FQA8N80C_F109 800V N-Channel MOSFET FQA8N80C_F109 800V N-Channel MOSFET Features • 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V • Low gate charge ( typical 35 nC) • Low Crss (...

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n) = 1.55Ω @VGS = 10 V • Low gate charge ( typical 35 nC) • Low Crss ( typical 13pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant November 2007 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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