Datasheet Details
| Part number | FQA85N06 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 645.34 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
 FQA85N06 Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 100A, 60V, RDS(on) = 0.010Ω @VGS = 10 V Low gate charge ( typical 86 nC) Low Crss ( typical 165 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P FQA Series TC = 25°C unless otherwise noted ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage - Continuous (TC = 25°C) Dra.