FDZ299P mosfet equivalent, p-channel 2.5 v specified powertrench bga mosfet.
*
–4.6 A,
–20 V RDS(ON) = 55 mΩ @ VGS =
–4.5 V RDS(ON) = 80 mΩ @ VGS =
–2.5 V
* Occupies only 2.2.
* Battery management
* Load switch
* Battery protection
S
B
G
Bottom
Top
TA=25oC unless otherwise noted
.
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combi.
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