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FDZ299P - P-Channel 2.5 V Specified PowerTrench BGA MOSFET

Description

Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and RDS(ON).

Features

  • 4.6 A,.
  • 20 V RDS(ON) = 55 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 80 mΩ @ VGS =.
  • 2.5 V.
  • Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6.
  • Ultra-thin package: less than 0.80 mm height when mounted to PCB.
  • Outstanding thermal transfer characteristics: 4 times better than SSOT-6.
  • Ultra-low Qg x RDS(ON) figure-of-merit.
  • High power and current handling capability.

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Full PDF Text Transcription (Reference)

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FDZ299P February 2004 FDZ299P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features • –4.6 A, –20 V RDS(ON) = 55 mΩ @ VGS = –4.5 V RDS(ON) = 80 mΩ @ VGS = –2.5 V • Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 • Ultra-thin package: less than 0.
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