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FDW2515N - Common Drain N-Channel 2.5V specified PowerTrench MOSFET

Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process.

12V).

Features

  • 5.8 A, 20 V RDS(ON) = 28 mΩ @ VGS = 4.5 V RDS(ON) = 38 mΩ @ VGS = 2.5 V.
  • Extended VGSS range (±12V) for battery.

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FDW2515NZ February 2003 FDW2515NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • 5.8 A, 20 V RDS(ON) = 28 mΩ @ VGS = 4.5 V RDS(ON) = 38 mΩ @ VGS = 2.5 V • Extended VGSS range (±12V) for battery applications • ESD protection diode (note 3) • High performance trench technology for extremely low RDS(ON) @ VGS = 2.
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