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FDW2510NZ - Dual N-Channel MOSFET

General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild’s Semiconductor’s advanced PowerTrench process.

12V).

Key Features

  • 6.4 A, 20 V RDS(ON) = 24 mΩ @ VGS = 4.5 V RDS(ON) = 32 mΩ @ VGS = 2.5 V.
  • Extended VGSS range (±12V) for battery.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDW2510NZ April 2004 FDW2510NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild’s Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • 6.4 A, 20 V RDS(ON) = 24 mΩ @ VGS = 4.5 V RDS(ON) = 32 mΩ @ VGS = 2.