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FDW2516NZ - N-Channel MOSFET

General Description

This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package.

Key Features

  • 5.8 A, 20 V RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V.
  • Isolated source and drain pins.
  • ESD protection diode (note 3).
  • High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V.
  • Low profile TSSOP-8 package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDW2516NZ March 2003 FDW2516NZ Common Drain N-Channel 2.5V specified PowerTrench® MOSFET General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package. Features • 5.8 A, 20 V RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V • Isolated source and drain pins • ESD protection diode (note 3) • High performance trench technology for extremely low RDS(ON) @ VGS = 2.