FDW2503NZ datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* 5.5 A, 20 V. RDS(ON) = 20 mΩ @ V GS = 4.5V RDS(ON) = 26 mΩ @ V GS = 2.5V
* Extended V GSS range (±12V) for battery applications
* ESD protection diode (not.

Application

with a wide range of gate drive voltage (2.5V
– 12V). Features
* 5.5 A, 20 V. RDS(ON) = 20 mΩ @ V G.

Description

This N -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V
– 12V). F.

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