Datasheet4U Logo Datasheet4U.com

FDW2506P - Dual P-Channel 2.5V Specified PowerTrench MOSFET

Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process.

12V).

Features

  • 5.3 A,.
  • 20 V, RDS(ON) = 0.022 Ω @ VGS =.
  • 4.5 V. RDS(ON) = 0.033 Ω @ VGS =.
  • 2.5V.
  • Extended VGSS range (±12V) for battery.

📥 Download Datasheet

Datasheet preview – FDW2506P

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor
  • FDW2501N - Dual N-Channel 2.5V Specified PowerTrench MOSFET
  • FDW2501NZ - Dual N-Channel 2.5V Specified PowerTrench MOSFET
  • FDW2502P - Dual P-Channel 2.5V Specified PowerTrench MOSFET
  • FDW2502PZ - Dual P-Channel 2.5V Specified PowerTrench MOSFET
  • FDW2503N - Dual N-Channel 2.5V Specified PowerTrench MOSFET
  • FDW2503NZ - Dual N-Channel MOSFET
  • FDW2504P - Dual P-Channel 2.5V Specified PowerTrench MOSFET
  • FDW2507N - Common Drain N-Channel 2.5V specified PowerTrench MOSFET

Full PDF Text Transcription

Click to expand full text
FDW2506P October 2000 FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –5.3 A, –20 V, RDS(ON) = 0.022 Ω @ VGS = –4.5 V. RDS(ON) = 0.033 Ω @ VGS = –2.5V.
Published: |