FDW2501N
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
Key Features
- 6 A, 20 V. RDS(ON) = 0.018 Ω @ VGS = 4.5V RDS(ON) = 0.028 Ω @ VGS = 2.5V
- Extended VGSS range (±12V) for battery applications
- High performance trench technology for extremely low RDS(ON)
- Low profile TSSOP-8 package
Applications
- Motor drive
