FDW2508P Datasheet Dual P-Channel 1.8 V Specified PowerTrench MOSFET

Manufacturer: Fairchild (now onsemi)

Datasheet Details

Part number	FDW2508P
Manufacturer	Fairchild (now onsemi)
File Size	135.27 KB
Description	Dual P-Channel 1.8 V Specified PowerTrench MOSFET
Datasheet	FDW2508P Datasheet

This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

FDW2508P December 2001 FDW2508P Dual P-Channel 1.8 V Specified PowerTrench.

6 A,.
12 V. RDS(ON) = 18 mΩ @ VGS =.
4.5 V RDS(ON) = 22 mΩ @ VGS =.
2.5 V RDS(ON) = 30 mΩ @ VGS =.
1.8 V Low gate charge(26nC typical) High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package.

Part Number	Description
FDW2508PB	Dual P-Channel MOSFET
FDW2501N	Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2501NZ	Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2502P	Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDW2502PZ	Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDW2503N	Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2503NZ	Dual N-Channel MOSFET
FDW2504P	Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDW2506P	Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDW2507N	Common Drain N-Channel 2.5V specified PowerTrench MOSFET