FDS8936S mosfet equivalent, dual n-channel mosfet.
Low gate charge. 5.0 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V. High density cell design for extremely low R DS(ON). High power and current handling capability in a widely .
such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance .
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