FDS89161LZ mosfet equivalent, dual n-channel mosfet.
General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
* Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A
* Shielded Gate MOSFET Technology
* Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
* Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A
* High performance trench technology for extremely low rDS(on)
This N-Channel logic Level MOSFETs a.
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