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FDS8935 Datasheet, ON Semiconductor

FDS8935 mosfet equivalent, dual p-channel mosfet.

FDS8935 Avg. rating / M : 1.0 rating-11

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FDS8935 Datasheet

Features and benefits


* Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
* Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A General Description
* This P-channel MOSFET is produce.

Application


* Load Switch
* Synchronous Rectifier D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 D2 55 D2 66 Q2 D1 77 Q1 D1 88 44 G2 .

Description


* This P-channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
* High performance trench technology for extremely low rDS(on)
* High .

Image gallery

FDS8935 Page 1 FDS8935 Page 2 FDS8935 Page 3

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