FDS8935 mosfet equivalent, dual p-channel mosfet.
* Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
* Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A
General Description
* This P-channel MOSFET is produce.
* Load Switch
* Synchronous Rectifier
D2 D2 D1 D1
Pin 1
G2 S2 G1 S1
D2 55
D2 66
Q2
D1 77
Q1
D1 88
44 G2 .
* This P-channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
* High performance trench technology for extremely low rDS(on)
* High .
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