FDS8935
FDS8935 is Dual P-Channel MOSFET manufactured by onsemi.
Features
- Max r DS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
- Max r DS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A
General Description
- This P-channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process that has been optimized for r DS(on), switching performance and ruggedness.
- High performance trench technology for extremely low r DS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- Ro HS pliant
Applications
- Load Switch
- Synchronous Rectifier
D2 D2 D1 D1
Pin 1
G2 S2 G1 S1
D2 55
D2 66
Q2
D1 77
Q1
D1 88
44 G2 33 S2 22 G1 11 S1
SO-8
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature...
