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FDS6375 - P-Channel MOSFET

General Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

8V).

Power management Load switch

Key Features

  • 8 A,.
  • 20 V. RDS(ON) = 24 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 32 mΩ @ VGS =.
  • 2.5 V.
  • Low gate charge (26 nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High current and power handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6375 September 2001 FDS6375 P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V). Applications • Power management • Load switch • Battery protection Features • –8 A, –20 V. RDS(ON) = 24 mΩ @ VGS = –4.5 V RDS(ON) = 32 mΩ @ VGS = –2.