FDS4465_F085 Datasheet, Fairchild Semiconductor

*
  –13.5 A,
  –20 V. RDS(ON) = 8.5 mΩ @ VGS =
  –4.5 V RDS(ON) = 10.5 mΩ @ VGS =
  –2.5 V RDS(ON) = 14 mΩ @.

with a wide range of gate drive voltage (1.8V
  – 8V). Applications
* Power management
* Load swit.

This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V
  – 8V). Appl.

FDS4465-F085

FDS4465-G

FDS4465

FDS4410

FDS4410A

FDS4435

FDS4435A

FDS4435BZ

FDS4435BZ-F085

FDS4435BZ_F085

FDS4470

FDS4480

FDS4488