Q1: N-Channel
* Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 12 A Q2: N-Channel
* Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 23 A
* Low inductance packaging short.

* Computing
* Communications
* General Purpose Point of Load Pin 1 Top V+ LSG Pin 1 GND GND V+ (HSD HS.

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have b.

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