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FDPC8011S - MOSFET

General Description

Q1: N-Channel Max rDS(on) = 7.3 mΩ at VGS = 4.5 V, ID = 12 A Q2: N-Channel Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 24 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lowe

Key Features

  • General.

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FDPC8011S PowerTrench® Power Clip FDPC8011S PowerTrench® Power Clip 25V Asymmetric Dual N-Channel MOSFET October 2014 Features General Description Q1: N-Channel „ Max rDS(on) = 7.3 mΩ at VGS = 4.5 V, ID = 12 A Q2: N-Channel „ Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 24 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.