FDPC8011S datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description Q1: N-Channel
* Max rDS(on) = 7.3 mΩ at VGS = 4.5 V, ID = 12 A Q2: N-Channel
* Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 24 A
* Low indu.

Application

* Computing
* Communications
* General Purpose Point of Load Pin 1 Top V+ LS Pin 1 GND GND V+ (HSD HSG.

Description

Q1: N-Channel
* Max rDS(on) = 7.3 mΩ at VGS = 4.5 V, ID = 12 A Q2: N-Channel
* Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 24 A
* Low inductance packaging shortens rise/fall times, resulting in lower switching losses
* MOSFET integrati.

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