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FDPC8016S - Dual N-Channel MOSFET

Description

This device includes two specialized N

dual package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Features

  • Q1: N-Channel.
  • Max RDS(on) = 3.8 mW at VGS = 10 V, ID = 20 A.
  • Max RDS(on) = 4.7 mW at VGS = 4.5 V, ID = 18 A Q2: N-Channel.
  • Max RDS(on) = 1.4 mW at VGS = 10 V, ID = 35 A.
  • Max RDS(on) = 1.7 mW at VGS = 4.5 V, ID = 32 A.
  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
  • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
  • These Devices are Pb.

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Datasheet preview – FDPC8016S

Datasheet Details

Part number FDPC8016S
Manufacturer ON Semiconductor
File Size 290.32 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDPC8016S Datasheet
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Full PDF Text Transcription

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MOSFET - Dual N‐Channel, Asymmetric, POWERTRENCH) Power Clip 25 V FDPC8016S General Description This device includes two specialized N−Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency. Features Q1: N-Channel • Max RDS(on) = 3.8 mW at VGS = 10 V, ID = 20 A • Max RDS(on) = 4.7 mW at VGS = 4.5 V, ID = 18 A Q2: N-Channel • Max RDS(on) = 1.4 mW at VGS = 10 V, ID = 35 A • Max RDS(on) = 1.7 mW at VGS = 4.
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