FDPC8016S Datasheet Dual N-Channel MOSFET

Manufacturer: onsemi

Overview: MOSFET - Dual N‐Channel, Asymmetric, POWERTRENCH) Power Clip 25 V.

Datasheet Details

This device includes two specialized N−Channel MOSFETs in a dual package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.

Q1: N-Channel.
Max RDS(on) = 3.8 mW at VGS = 10 V, ID = 20 A.
Max RDS(on) = 4.7 mW at VGS = 4.5 V, ID = 18 A Q2: N-Channel.
Max RDS(on) = 1.4 mW at VGS = 10 V, ID = 35 A.
Max RDS(on) = 1.7 mW at VGS = 4.5 V, ID = 32 A.
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
These Devices are Pb.

Brand Logo	Part Number	Description	Manufacturer
	FDPC8016S	MOSFET	Fairchild Semiconductor