FDN372S mosfet equivalent, n-channel mosfet.
* 2.6 A, 30 V. RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V
* Low gate charge
* Fast switching speed
* High performance trench technology f.
*
* DC-DC Converter Motor Drives
D
D
S
G S
SuperSOT -3
TM
G
TA=25oC unless otherwise noted
Absolute Maxim.
The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds(on) and low gate cha.
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