FDMS86550 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description
* Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A
* Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A
* Advanced Package and Silicon combinati.

Application

* Primary DC-DC MOSFET
* Secondary Synchronous Rectifier
* Load Switch Top Pin 1 Bottom S Pin 1 S S G S .

Description

* Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A
* Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconduct.

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