* Max rDS(on) = 2.5 mW at VGS = 10 V, ID = 25 A
* Max rDS(on) = 3.7 mW at VGS = 4.5 V, ID = 20 A
* Advanced Package and Silicon combination for low rDS(on) an.

* Primary Switch in Isolated DC−DC
* Synchronous Rectifier
* Load Switch MAXIMUM RATINGS (TA = 25°C unless .

This N−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or conventional switching PWM controllers. It has been optimized fo.

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