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FDMS86520L - N-Channel MOSFET

General Description

Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 13.5 A Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A Advanced package and silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested This N-Channel MOSFET has been

Key Features

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FDMS86520L N-Channel PowerTrench® MOSFET FDMS86520L N-Channel PowerTrench® MOSFET 60 V, 22 A, 8.2 mΩ October 2014 Features General Description „ Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 13.5 A „ Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A „ Advanced package and silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.