FDMS4435BZ mosfet equivalent, mosfet.
* Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A
* Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A
* Extended VGSS range (-25 V) for battery applications
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability
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This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications co.
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