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FDMS4D5N08LC - N-Channel MOSFET

Description

This N

ON Semiconductor’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 37 A.
  • Max rDS(on) = 6.1 mW at VGS = 4.5 V, ID = 29 A.
  • 50% Lower Qrr than Other MOSFET Suppliers.
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • RoHS Compliant Typical.

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Full PDF Text Transcription

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FDMS4D5N08LC MOSFET, N-Channel Shielded Gate, POWERTRENCH) 80 V, 116 A, 4.2 mW General Description This N−Channel MV MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Shielded Gate MOSFET Technology • Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 37 A • Max rDS(on) = 6.1 mW at VGS = 4.
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