FDMS4D5N08LC datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 37 A
* Max rDS(on) = 6.1 mW at VGS = 4.5 V, ID = 29 A
* 50% Lower Qrr than Ot.

Application

* Primary DC−DC MOSFET
* Synchronous Rectifier in DC−DC and AC−DC
* Motor Drive
* Solar MOSFET MAXIMUM .

Description

This N−Channel MV MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance wi.

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