FDMS4435BZ mosfet equivalent, p-channel mosfet.
* Max rDS(on) = 20 mW at VGS = −10 V, ID = −9.0 A
* Max rDS(on) = 37 mW at VGS = −4.5 V, ID = −6.5 A
* Extended VGSS range (−25 V) for battery applications
common in Notebook Computers and Portable Battery Packs.
Features
* Max rDS(on) = 20 mW at VGS = −10 V, ID = −9.0 A .
This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Co.
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