Datasheet Summary
FDMS3620S PowerTrench® PowerStage
July 2012
PowerTrench® PowerStage
25V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
- Max rDS(on) = 4.7 mΩ at VGS = 10 V, ID = 17.5 A
- Max rDS(on) = 5.5 mΩ at VGS = 4.5 V, ID = 16 A
Q2: N-Channel
- Max rDS(on) = 1.0 mΩ at VGS = 10 V, ID = 38 A
- Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 35 A
- Low inductance packaging shortens rise/fall times, resulting in lower switching losses
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- RoHS pliant
General Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally...