FDMQ86530L datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A
* Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
* Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = .

Application

* RoHS Compliant
* Active bridge
* Diode Bridge replacement in 24V & 48V AC systems Top Bottom G4 D1/D4.

Description

* Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A
* Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
* Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A
* Substantial efficiency benefit in PD solutions This Quad MOSFET solution provides ten-fo.

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