General Description
* Max rDS(on) = 5.8mΩ at VGS = 10V, ID = 13.5A
* Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 11.8A
* Low Profile - 1mm max in Power 33
*.

* Max rDS(on) = 5.8mΩ at VGS = 10V, ID = 13.5A
* Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 11.8A
* Low Profile - 1mm max in Power 33
* 100% UIL Tested
* RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconducto.

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