FDMC8010ET30 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* Extended TJ rating to 175°C
* Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A
* Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A
* High performance technolo.

Application

where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions. Applications .

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in .

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