FDMC8010ET30 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Extended TJ Rating to 175°C
* Max rDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A
* Max rDS(on) = 1.8 mW at VGS = 4.5 V, ID = 25 A
* High Performance Technolo.

Application

where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions. Features

Description

This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for applications where ultra low rDS(on) is required in small sp.

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