* Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A
* Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A
* Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A
* Max r.

* Li-lon Battery Pack Pin 1 D D G Bottom Drain Contact D D 1 2 3 6 5 4 D D Drain Source G S D D S MicroF.

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe. Applications
* Li-lon Battery Pack Pin 1 D D G Bottom Drain Con.

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