* Q1
  –2.8 A,
  –20 V.
* Q2 3.2 A, 20 V.
* Low gate charge RDS(ON) = 160 mΩ @ VGS =
  –4.5 V RDS(ON) = 230 mΩ @ V.

where low in-line power loss and fast switching are required. Applications
* DC/DC converter
* Load switch
.

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for.

FDJ1027P

FDJ1028N

FDJ127P

FDJ128N

FDJ129P

FD-235HF

FD-235HF-A429

FD-235HF-Cxxx

FD-235HG-Cxxx

FD-N939

FD-xx

FD02-101GRL

FD02-101HRL

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