Datasheet Details
| Part number | FDJ128N |
|---|---|
| Manufacturer | Fairchild (onsemi) |
| File Size | 171.17 KB |
| Description | N-Channel 2.5 Vgs Specified PowerTrench MOSFET |
| Datasheet |
 FDJ128N Datasheet
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General Description
This N-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.
Battery managementKey Features
- 5.5 A, 20 V. RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS = 2.5 V.
- Low gate charge.
- High performance trench technology for extremely low RDS(ON).
- Compact industry standard SC75-6 surface mount package G S S SSS Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous.
- Pulsed (Note 1a) PD TJ, TSTG Power Dissipation for Single Opera.