* 5.5 A, 20 V. RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS = 2.5 V
* Low gate charge
* High performance trench technology for extremely low RDS(ON) .

Applications
* Battery management Features
* 5.5 A, 20 V. RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS.

This N-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications
* Battery management Features
* 5.5 A, 20 V. RDS(ON) = 35 mΩ @ VG.

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