FDJ129P
Description
This P-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.
Features
- - 4.2 A,
- 20 V. RDS(ON) = 70 mΩ @ VGS =
- 4.5 V RDS(ON) = 120 mΩ @ VGS =
- 2.5 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- pact industry standard SC75-6 surface mount package
Applications
- Battery management
- Load switch
Bottom Drain
4 5
3 2 1
SC75-6 FLMP
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
TA=25o C unless otherwise noted
Parameter
Ratings
- 20 ± 12
(Note 1a)
Units
V V A W °C
- 4.2
- 16 1.6
- 55 to +150
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics...
