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FDFME3N311ZT - N-Channel MOSFET and Schottky Diode

General Description

Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated compounds and antimony oxides HBM ESD protection level > 1600

Key Features

  • General.

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FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode FDFME3N311ZT July 2010 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ Features General Description „ Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A „ Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and antimony oxides „ HBM ESD protection level > 1600 V (Note 3) „ RoHS Compliant This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance.