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FDFM2P110 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Datasheet Summary

Description

FDFM2P110 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package.

Buck Boost

Features

  • This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance.
  • -3.5 A, -20 V RDS(ON) = 140mΩ @ VGS = -4.5 V RDS(ON) = 200mΩ @ VGS = -2.5 V.
  • Low Profile - 0.8 mm maximun - in the new package MicroFET 3x3 mm PIN 1 A SG A1 6A C/D S2 5S G3 4D TOP MLP 3x3 AS D BOTTOM Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID VRRM IO PD Parame.

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Datasheet Details

Part number FDFM2P110
Manufacturer Fairchild Semiconductor
File Size 255.22 KB
Description Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Datasheet download datasheet FDFM2P110 Datasheet
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Full PDF Text Transcription

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FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode August 2005 FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description FDFM2P110 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. Applications „ Buck Boost Features This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance. „ -3.5 A, -20 V RDS(ON) = 140mΩ @ VGS = -4.5 V RDS(ON) = 200mΩ @ VGS = -2.5 V „ Low Profile - 0.
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