FDD6N50 mosfet equivalent, n-channel mosfet.
* RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A
* Low Gate Charge (Typ. 12.8 nC)
* Low Crss (Typ. 9 pF)
* 100% Avalanche Tested
* Improved dv/dt Capa.
* LCD/LED/PDP TV
* Lighting
* Uninterruptible Power Supply
* AC-DC Power Supply
D
November 2013
Descrip.
Image gallery
Download