Datasheet Summary
- N-Channel UniFETTM MOSFET
N-Channel UniFETTM MOSFET
200 V, 4.5 A, 800 mΩ
Features
- RDS(on) = 600 mΩ (Typ.) @ VGS = 10 V, ID = 2.3 A
- Low Gate Charge (Typ. 4.7 nC)
- Low Crss (Typ. 6.3 pF)
- 100% Avalanche Tested
- RoHS pliant
Applications
- LCD/LED/PDP TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
November 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter...