FDD6N20
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A
- Low gate charge ( Typ. 4.7nC )
- Low Crss ( Typ. 6.3pF )
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS compliant May 2007 UniFETTM tm
