FDD6680A
Overview
This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
- 56 A, 30 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.0130 Ω @ VGS = 4.5 V. Low gate charge ( 23nC typical ). Fast switching speed. High performance trench technology for extremely low RDS(ON).
